Deflection 5 8 15

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DASS slotted track is designed to accommodate wall deflection in both loadbearing and non-loadbearing applications. Slotted track leg height is 2-1/2' and allows for deflection through its pre-punched 1-1/2' slots along both flanges of the track. The slots are spaced at 1' on center to allow for maximum flexibility. The slotted track is fast and economical reducing labor cost and material required while accommodating deflection requirements in virtually all applications.

WEB: 2-1/2' 3-5/8' 6' 8' 10' and 12' Widths

Thicknesses: 25 gauge to 12 gauge

2.5 cm width x 0.16 cm thick side-notched specimen, K t = 17. Ultimate Bearing Strength: 607 MPa: 88000 psi: Edge distance/pin diameter = 2.0: Bearing Yield Strength: 386 MPa: 56000 psi: Edge distance/pin diameter = 2.0: Poissons Ratio: 0.33: 0.33: Estimated from trends in similar Al alloys. Fatigue Strength: 96.5 MPa @# of Cycles 5.00e+8. Acoustiblok offers high performance soundproofing insulation and acoustic insulation for multifamily projects, condominiums, hotels, hospitals, construction sites, industrial areas and more. After 5.8 earthquake, Greek island of Crete hit by strong aftershocks UK Army prepares to deliver fuel to nation's petrol stations Japan lifts COVID-19 restrictions for first time in 6 months.

Please contact us for your specific project requirements to determine which product meets your design requirements.

FLANGE SIZES

• ASTM 1003 Standard specification for steel sheet coated and metallic coated for cold-formed framing members
• ASTM A653 Standard specification for steel sheet zinc-coated (galvanized) by the hot-dip process
• ASTM A792 Standard specification for zinc-coated steel by the hot-dipped process
• ASTM C645 Standard specification for non-structural steel framing members
• ASTM C754 Standard specification for the installation of steel framing members
• ASTM C1047 Standard specification for trims and accessories

Биполярный транзистор BU508AX - описание производителя. Основные параметры. Даташиты.

Наименование производителя: BU508AX

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 45 W

Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V

Макcимальный постоянный ток коллектора (Ic): 8 A

Граничная частота коэффициента передачи тока (ft): 7 MHz

Статический коэффициент передачи тока (hfe): 6

Корпус транзистора: TO3PML

BU508AX Datasheet (PDF)

0.1. bu508ax.pdf Size:50K _philips

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AX GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope, primarily for use inhorizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VB

0.2. bu508ax.pdf Size:216K _inchange_semiconductor

isc Silicon NPN Power Transistor BU508AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

8.1. bu508aw.pdf Size:61K _philips

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflectioncircuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE = 0 V - 1500

8.2. bu508af 2.pdf Size:48K _philips

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use inhorizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VB

8.3. bu508af.pdf Size:216K _st

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BU508AFHigh voltage NPN power transistor for standarddefinition CRT displayFeatures State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement32 Tight hFE range at operating collector current1 High ruggednessISOWATT218FX Fully insulated power pa

8.4. bu208a bu508a bu508afi.pdf Size:245K _st

BU208ABU508A/BU508AFIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L.TO-3COMPLIANT) FOR EASY MOUNTING1APPLICATIONS: 2 HORIZONTAL DEFLECTION FOR COLOURTV DESCRIPTION The BU208A, BU508A and BU508AFI aremanufactured using Multiepitaxial Mesa33technolo

8.5. bu208a bu508a .pdf Size:75K _st

BU208ABU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE(U.L. FILE # E81734 (N)TO-3 JEDEC TO-3 METAL CASE.1APPLICATIONS:2 HORIZONTAL DEFLECTION FOR COLOURTVDESCRIPTIONThe BU208A, BU508A and BU508AFI aremanufactured using Multiepitaxial Mesa33technology f

8.6. bu508aw.pdf Size:216K _st

BU508AWHigh voltage NPN power transistor for standarddefinition CRT displayFeatures State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement3 Tight hFE range at operating collector current21 High ruggedness TO-247 semi-insulated power packageT

8.7. bu208a bu508a.pdf Size:236K _st

BU208ABU508A/BU508AFIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L.TO-3COMPLIANT) FOR EASY MOUNTING1APPLICATIONS: 2 HORIZONTAL DEFLECTION FOR COLOURTV DESCRIPTION The BU208A, BU508A and BU508AFI aremanufactured using Multiepitaxial Mesa33technolo

8.8. bu508a.pdf Size:91K _st

BU208A/508A/508AFIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE(U.L. FILE # E81734 (N)TO-3 JEDEC TO-3 METAL CASE.1APPLICATIONS:2 HORIZONTAL DEFLECTION FOR COLOURTVDESCRIPTIONThe BU208A, BU508A and BU508AFI aremanufactured using Multiepitaxial Mesa33technology for c

8.9. bu508af.pdf Size:47K _fairchild_semi

BU508AF TV Horizontal Output ApplicationsTO-3PF11.Base 2.Collector 3.EmitterNPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 1

8.10. bu508afi.pdf Size:78K _utc

UTC BU508 AFI NPN EPITAXIAL SILICON TRANSISTOR SILICON DIFFUSED POWER TO-3PML TRANSISTOR 1. BASE2. COLLECTOR3. EMITTERDESCRIPTION The UTC BU508AFI is high voltage, high speed switching NPN transistors in a plastic envelope, primarily for use in horizontal deflection circuites of colour television receivers.1 2 3Features * TV color horizontal deflection. * With TO-3P

8.11. bu508at.pdf Size:118K _cdil

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR POWER TRANSISTOR BU508ATTO-220Plastic PackageHigh Voltage, High-Speed Switching TransistorIntended for use in Horizontal Deflection Circuits of Colour TelevisionsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage VCES 1500 VVCEO Collector

8.12. bu508a.pdf Size:264K _cdil

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508ATO- 3PN Non IsolatedPlastic PackageColor TV Horizontal Output Application (No Damper Diode)ABSOLUTE MAXIMUM RATINGS (Ta=25C Unless Specified Otherwise )DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 1500 VCollector -Emitter V

8.13. bu508af.pdf Size:211K _inchange_semiconductor

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isc Silicon NPN Power Transistor BU508AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

8.14. bu508at.pdf Size:211K _inchange_semiconductor

isc Silicon NPN Power Transistor BU508ATDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Power Dissipation-: P = 100W@T = 25D CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

8.15. bu508aw.pdf Size:214K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor BU508AWDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

8.16. bu508a.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Power Transistor BU508ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Power Dissipation-: P = 125W@T = 25D CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

8.17. bu508afi.pdf Size:214K _inchange_semiconductor

isc Silicon NPN Power Transistor BU508AFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

8.18. bu508a-m.pdf Size:87K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU508A-M DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) High Power Dissipation- : PD= 100W@TC= 25 APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT V Collector- Emitter Voltage(V = 0)

Другие транзисторы... BU2720DF, BU2722AF, BU2725AX, BU2725DX, BU2727AF, BU2727AW, BU2727DF, BU508AW, S9013, BU508DW, BU508DX, BUF405AFP, BUH1015HI, BUH417D, BUH713, BUH715AF, BUL6825.

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Список транзисторов

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